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| SMD Type Silicon Switching Diode Array BAW101 Diodes Unit: mm Features Electrically insulated high-voltage medium-speed diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e v e rs e v o lta g e P e a k re v e rs e v o lta g e F o rw a rd c u rre n t P e a k fo rw a rd c u rre n t S u rg e fo rw a rd c u rre n t, t = 1 T o ta l p o w e r d is s ip a tio n , T S J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re ra n g e J u n c tio n - a m b ie n t 1) S ym bol VR V RM IF IF M s 35 IF S P to t Tj T s tg R th R th JA JS V a lu e 300 300 250 500 4 .5 350 150 -6 5 to + 1 5 0 470 330 U n it V V mA mA A mW K /W K /W J u n c tio n - s o ld e rin g p o in t N o te 1 .P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m 40 m m 1 .5 m m /6 c m 2 C u www.kexin.com.cn 1 SMD Type BAW101 Diodes Electrical Characteristics Ta = 25 Parameter Breakdown voltage Forward voltage Reverse current Diode capacitance Reverse recovery time Symbol VBR VF IR Cd trr Conditions I(BR) = 100 A Min 300 1.3 150 50 6 1 Typ Max Unit V V nA A pF IF = 100 mA VR = 250 V VR = 250 V, TA = 150 VR = 0 V, f = 1 MHz IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Marking Marking JPS 2 www.kexin.com.cn |
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